RD30HUF1 Datasheet, Mitsubishi Electric Semiconductor

1 3.0+/-0.4 5.1+/-0.5 For output stage of high power amplifiers in UHF band mobile radio sets. 2.3+/-0.3 APPLICATION 2.8+/-0.3 0.10 PIN 1.Drain 2.Source 3.Gate UN.

7.2+/-0.5 OUTLINE
*High power gain: Pout>30W, Gp>10dB @Vdd=12.5V,f=520MHz
*High Efficiency: 55%typ. 2 3 R1..

RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications. 7.2+/-0.5 OUTLINE
*High power gain: Pout>30W, Gp>10dB @Vdd=12.5V,f=520MHz
*High Efficiency: 55%typ. 2 3 R1.6 14.0+/-0.4 6.6+/-0.3 FEA.